#DOWNLOAD MICROWIND 3.5 SOFTWARE#
PMT Depot, Paud Road, Kothrud, Pune - 411 038, India Email : URL : Phone : +91 20 25286947 / 48ĪBOUT MICROWIND MICROWIND is truly integrated EDA software encompassing IC designs from concept to completion, enabling chip designers to design beyond their imagination. (ni2designs), 21/22, Bandal Dhankude Plaza, Opp. l l l l l lįor Support Contact: : : For Sales Contact: World Wide Licensing Distributor: ni logic Pvt. l Advanced 3D layout view with GEL technology l 2D cross sectional viewer with strain technology support. l User can check the gate oxide and the MOS lateral drain diffusion structure. Check the oxide structure, the low dielectric (Low K) and high K (SiO2) Sandwich, and passivation. Check planes of VDD, VSS, and others signals. See the self-aligned diffusion after the polysilicon gate is fabricated. See how the contacts and metallizations are created. Step-by-step 3-D visualization of fabrication for any portion of layout.
#DOWNLOAD MICROWIND 3.5 SIMULATOR#
Highlights 3D fabrication process simulator with cross sectional viewer. The user can modify the viewing position in X,Y,Z and play with light sources to create illustrative views of the layout. This command is based on OpenGL and offers outstanding picture quality. With MICROWIND v3.5 VirtualFab enables to draw real-time images of the layout and navigate in full-3D on the surface or inside the IC. As VirtualFab offers you a facility to analyze and view cross sectional view of silicon layers and 3D view of circuits. You will never teach deep-sub micron technology like before.
l Documentation includes several aspects of MOS modeling. l Supports level1, level3 and BSIM4 MOS models.
#DOWNLOAD MICROWIND 3.5 FULL#
l You can also fit the simulations with measurements we made in testchips fabricated in 0.35, 0.25 and 0.18 µm l Full length tutorial on MOS models is provided in manual, with details on all parameters. L Change the model parameters and see their effects on Id/Vd, Id/Vg, Id(log)/Vg, threshold vs Length. l Programming can be performed by a very high voltage supply on the gate L Simulation of non-volatile memories such as EPROM, EEPROM and FLASH using double-gate MOS l Erasure of floating gates and removal all electrons. MICROWIND supports MOS models 1, 3 and BSIM4. In the manual, a tutorial on MOS models is given, with details on all parameters. You can also fit the simulations with measurements we made in test-chips fabricated in 0.35, 0.25 and 0.18µm. Change the model parameters and see their effects on Id/Vd, Id/Vg Id(log)/Vg, threshold vs. Some electrons are sufficiently accelerated to pass through the gate oxide by hot tunneling effect.Ī valuable screen to understand the MOS characteristics, with a user interface that designers will like. The programming is performed by a very high voltage supply on the gate (7V in 0.12µm), a 1.2V voltage difference between drain and source.
The command "UV exposure" erases floating gates and removes all electrons. The double-gate MOS has been introduced in MICROWIND for the simulation of non-volatile memories such as EPROM, EEPROM and FLASH.